Sex: Male
Education:
- Doctor of Philosophy in Physics, Mindanao State University - Iligan Institute of Technology, 2020
- Master of Science in Physics, Mindanao State University - Iligan Institute of Technology, 2015
- Bachelor of Science in Physics, Mindanao State University - Iligan Institute of Technology, 2013
Field of Specialization:
Optoelectronics
Semiconductor Device Physics
Material Characterization
Semiconductor Physics
Electrical Characterization
Thin Film Fabrication
Researches:
Article title: Modified SILAR grown ZnO films on p-Si(100) with enhanced charge separation for UV light sensing application
Authors: Jose Presiphil B. Ontolan Jr.,Junie Jhon M. Vequizo,Akira Yamakata,Reynaldo M. Vequizo
Publication title: Physica Status Solidi A: Applications and Materials Science (2021)
Abstract:
Herein, the growth of pristine ZnO nanostructures thin film on p-Si(100) by modified successive ionic layer adsorption-reduction method, revealing significant improvement in the charge collection for ultraviolet light detection, is reported. The deposited ZnO exhibits spindle-like and hexagonal structure that grows preferentially along the c-axis. Two-probe electrical measurements validate the rectifying nature of the constructed n-ZnO/p-Si(100), revealing a substantial 11.3-fold increase in photocurrent at room temperature under 375 nm irradiation at +3 V working voltage. The drastic increase in photocurrent is linked to efficient charge separation caused by charge transfer and band bending effects, as indicated by microsecond time-resolved absorption measurements, providing useful information for device development.
Full text available upon request to the author
Article title: Effects of precursor composition used in solution precursor plasma spray on the properties of ZnO coatings for CO2 and UV light sensing
Authors: R.T. Candidato, J.P.B. Ontolan Jr., P. Carpio, L. Pawłowski, and R.M. Vequizo
Publication title: Surface and Coatings Technology 371, 2015
Abstract:
The potential of finely-structured zinc oxide (ZnO) coatings developed via solution precursor plasma spraying (SPPS) as CO2 gas and UV light sensor was explored in this work. The coatings were deposited on stainless steel substrates using aqueous solutions of zinc nitrate and zinc acetate as precursors. The coatings' microstructures were studied in relation to the solution precursors used. Relatively porous coatings were obtained when using acetate as starting precursor compared to the coatings from the nitrate precursor. This was attributed to the different chemical routes of ZnO formation for each precursor droplet upon contact with plasma jet. Phase analysis confirmed the formation of polycrystalline ZnO having wurtzite structure from both precursors. The sprayed ZnO coatings showed good sensitivity and recovery towards UV light. Moreover, the coatings were sensitive towards carbon dioxide (CO2) analyte gas but did not show any good recovery which was attributed to the microstructure of the coatings. These results showed the feasibility of SPPS process for the fabrication of finely-structured ZnO coatings as sensors of CO2 gas and UV light.
Full text available upon request to the author
Article title: Properties of in situ HCl-doped emeraldine polyaniline on n-Si(100) substrates for diode application
Authors: J.P.B. Ontolan Jr., P.A.M. Alcantara, R.M. Vequizo, M.K. Odarve, B.R.B. Sambo
Publication title: Physica Status Solidi C, 1-4 2015
Abstract:
In this study, the characteristic physicochemical and electrical properties of HCl-doped polyaniline (PAni) films grown via oxidative chemical polymerization of aniline on n -Si(100) are presented. Two exothermic processes were found for 0.2 M HCl solution during aniline polymerization while all others underwent one exothermic process only. All polyaniline films were of emeraldine salt form that exhibited connected rod-like to agglomerated grains and dendritic surface morphologies on top of wetting layer with increasing hydrochloric acid concentration. Rectifying behavior of p- PAni/n -Si(100) heterojunctions were also found indicating the formation of p-n junctions between p -PAni and n -Si(100). (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Full text available upon request to the author
Papers Presented:
Article title: Newly Prepared Hybrid Organic/Inorganic Heterojunction with Enhanced Light Sensing Performance
Authors: J.P.B. Ontolan Jr.
Conference title: Regional Multidisciplinary Research Conference 2020
Article title: Synthesis and characterization of p-PAni/n-Si(100) composites
Authors: J.P.B. Ontolan Jr.
Conference title: 34th IIT HEP Scientific Conference, MSU-IIT, CSM Lecture Hall A, Iligan City, Philippines. March 2015
Article title: Electrical properties of p-PAni/n-Si(100) heterojunctions for diode application
Authors: J.P.B. Ontolan Jr.
Conference title: 33rd IIT HEP Scientific Conference, MSU-IIT, CSM Lecture Hall A, Iligan City, Philippines. October 2014
Article title: Characteristic of in situ HCl-doped emeraldine polyaniline on n-Si(100) substrate for rectifying diode application
Authors: J.P.B. Ontolan Jr.
Conference title: 12th MSU-IIT Annual In-House Review of Research and Development Projects, Iligan City, Philippines. August 2014
Article title: Hybrid PAni/ZnO Diodes for Ammonia Gas Sensor Application
Authors: J.P.B. Ontolan Jr.
Conference title: 32nd IIT HEP Scientific Conference, Plames Beach Resort, Naawan, Misamis Occidental, Philippines. March 2013
Article title: I-V Characteristics of p-PAni/n-ZnO Composite prepared via Chemical Bath Deposition
Authors: J.P.B. Ontolan Jr.
Conference title: 31st IIT HEP Scientific Conference, MSU-IIT, CSM Lecture Hall A, Iligan City, Philippines. October 2012
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