Sex: Male
Education:
- Doctor of Philosophy in Physics, National Sun Yat-Sen, University of Kaohsiung Taiwan, 2018
- Master of Science in Physics, National Sun Yat-Sen, University of Kaohsiung Taiwan, 2015
- Bachelor of Science in Applied Physics, University of the Philippines Los Baños, 2012
Field of Specialization:
Condensed matter theory
Spintronics
Theoretical Condensed Matter Physics
Electronic Structure
Quantum Mechanics
Density Functional Theory
Computational Materials Science
Material Modeling
Quantum Chemistry
Molecular Dynamics Simulation
Researches:
Article title: Quantum anomalous Hall insulator phases in Fe-doped GaBi honeycomb
Authors: Zhi-Quan Huang, Chia-Hsiu Hsu, Christian P. Crisostomo, Gennevieve Macam Jing-Rong Su, HsinLin, Arun Bansil, Feng-Chuan Chuang
Publication title: Chinese Journal of Physics 67: 246-252, October 2020
Abstract:
We discuss electronic and magnetic properties of the Fe-doped GaBi honeycomb using first principles calculations. Our analysis shows that the pristine GaBi honeycomb transitions from being a two-dimensional quantum spin Hall (QSH) insulator to a quantum anomalous Hall (QAH) insulator when it is doped with one Fe atom in a 4 × 4 GaBi honeycomb. The QAH phase in Fe-doped GaBi is found to be robust in that it maintains its Chern number (C = 1) under fairly large strains ( ∼ 4%) and supports a gap as large as 112 meV at 2.21% strain. The QAH phase is also retained when the Fe-doped GaBi is placed on a CdTe substrate, suggesting that Fe-doped GaBi films could be useful for spintronics applications.
Full text available upon request to the author
Article title: Thickness dependent electronic properties of Pt dichalcogenides
Authors: Rovi Angelo B. Villaos, Christian P. Crisostomo, Zhi-Quan Huang, Shin-Ming Huang, Allan Abraham B. Padama, Marvin A. Albao, Hsin Lin & Feng-Chuan Chuang
Publication title: npj 2D Materials and Applications 3(1), December 2019
Abstract:
Platinum-based transition metal dichalcogenides have been gaining renewed interest because of the development of a new method to synthesize thin film structures. Here, using first-principles calculation, we explore the electronic properties of PtX2 (X = S, Se, and Te) with respect to film thickness. For bulk and layered structures (1 to 10 layers), octahedral 1T is the most stable. Surprisingly, we also find that the 3R structure has comparable stability relative to the 1T, implying possible synthesis of 3R. For a bulk 1T structure, PtS2 is semiconducting with an indirect band gap of 0.25 eV, while PtSe2 and PtTe2 are both semi-metallic. Still, all their corresponding monolayers exhibit an indirect semiconducting phase with band gaps of 1.68, 1.18, and 0.40 eV for PtS2, PtSe2, and PtTe2, respectively. For the band properties, we observe that all these materials manifest decreasing/closing of indirect band gap with increasing thickness, a consequence of quantum confinement and interlayer interaction. Moreover, we discover that controlling the thickness and applying strain can manipulate van Hove singularity resulting to high density of states at the maximum valence band. Our results exhibit the sensitivity and tunability of electronic properties of PtX2, paving a new path for future potential applications.
Full text link https://tinyurl.com/3jfcrkad
Article title: Prediction of Quantum Anomalous Hall Effect in MBi and MSb (M:Ti, Zr, and Hf) Honeycombs
Authors: Zhi-Quan Huang, Wei-Chih Chen, Gennevieve M. Macam, Christian P. Crisostomo, Shin-Ming Huang, Rong-Bin Chen, Marvin A. Albao, Der-Jun Jang, Hsin Lin & Feng-Chuan Chuang
Publication title: Nanoscale Research Letters 13, 2018
Abstract:
The abounding possibilities of discovering novel materials has driven enhanced research effort in the field of materials physics. Only recently, the quantum anomalous hall effect (QAHE) was realized in magnetic topological insulators (TIs) albeit existing at extremely low temperatures. Here, we predict that MPn (M =Ti, Zr, and Hf; Pn =Sb and Bi) honeycombs are capable of possessing QAH insulating phases based on first-principles electronic structure calculations. We found that HfBi, HfSb, TiBi, and TiSb honeycomb systems possess QAHE with the largest band gap of 15 meV under the effect of tensile strain. In low-buckled HfBi honeycomb, we demonstrated the change of Chern number with increasing lattice constant. The band crossings occurred at low symmetry points. We also found that by varying the buckling distance we can induce a phase transition such that the band crossing between two Hf d-orbitals occurs along high-symmetry point K2. Moreover, edge states are demonstrated in buckled HfBi zigzag nanoribbons. This study contributes additional novel materials to the current pool of predicted QAH insulators which have promising applications in spintronics.
Full text link https://tinyurl.com/yfty4yfc
Article title: Chemically induced large-gap quantum anomalous Hall insulator states in III-Bi honeycombs
Authors: Christian P. Crisostomo, Zhi-Quan Huang, Chia-Hsiu Hsu, Feng-Chuan Chuang, Hsin Lin & Arun Bansil
Publication title: Computational Materials volume 3, 2017
Abstract:
The search for novel materials with new functionalities and applications potential is continuing to intensify. Quantum anomalous Hall (QAH) effect was recently realized in magnetic topological insulators (TIs) but only at extremely low temperatures. Here, based on our first-principles electronic structure calculations, we predict that chemically functionalized III-Bi honeycombs can support large-gap QAH insulating phases. Specifically, we show that functionalized AlBi and TlBi films harbor QAH insulator phases. GaBi and InBi are identified as semimetals with non-zero Chern number. Remarkably, TlBi exhibits a robust QAH phase with a band gap as large as 466 meV in a buckled honeycomb structure functionalized on one side. Furthermore, the electronic spectrum of a functionalized TlBi nanoribbon with zigzag edge is shown to possess only one chiral edge band crossing the Fermi level within the band gap. Our results suggest that III-Bi honeycombs would provide a new platform for developing potential spintronics applications based on the QAH effect.
Full text link https://tinyurl.com/28uftxtt
Article title: Quantum anomalous Hall insulator phase in asymmetrically functionalized germanene
Authors: Chia-Hsiu Hsu, Yimei Fang, Shunqing Wu, Zhi-Quan Huang, Christian P. Crisostomo, Yu-Ming Gu, Zi-Zhong Zhu, Hsin Lin, Arun Bansil, Feng-Chuan Chuang, and Li Huang
Publication title: Physical Review B 96:165426, October 2017
Abstract:
Using first-principles computations, we discuss topological properties of germanene in buckled as well as planar honeycombs with asymmetric passivation via hydrogen and nitrogen (GeHN) atoms. GeHN in the planar structure is found to harbor a quantum anomalous Hall (QAH) insulator phase. Our analysis indicates that the buckled GeHN also possesses a QAH phase under tensile strain. We computed the associated Chern numbers and edge states to confirm the presence of the QAH state. In particular, chiral edge bands connecting conduction and valence bands were found at the edges of a planar zigzag GeHN nanoribbon. By considering a range of buckling distances, we demonstrate how the system undergoes the transition from the trivial to the QAH phase between the buckled and planar structures. Finally, we show CdTe(111) to be a suitable substrate for supporting buckled germanene in the QAH phase. Our results suggest that functionalized germanene could provide a robust QAH-based platform for spintronics applications.
Full text available upon request to the author
Article title: Two-dimensional Topological Crystalline Insulator Phase in Sb/Bi Planar Honeycomb with Tunable Dirac Gap
Authors: Chia-Hsiu Hsu, Zhi-Quan Huang, Christian P. Crisostomo, Liang-Zi Yao, Feng-Chuan Chuang, Yu-Tzu Liu, Baokai Wang, Chuang-Han Hsu, Chi-Cheng Lee, Hsin Lin & Arun Bansil
Publication title: Scientific Reports 6, 2016
Abstract:
We predict planar Sb/Bi honeycomb to harbor a two-dimensional (2D) topological crystalline insulator (TCI) phase based on first-principles computations. Although buckled Sb and Bi honeycombs support 2D topological insulator (TI) phases, their structure becomes planar under tensile strain. The planar Sb/Bi honeycomb structure restores the mirror symmetry and is shown to exhibit non-zero mirror Chern numbers, indicating that the system can host topologically protected edge states. Our computations show that the electronic spectrum of a planar Sb/Bi nanoribbon with armchair or zigzag edges contains two Dirac cones within the band gap and an even number of edge bands crossing the Fermi level. Lattice constant of the planar Sb honeycomb is found to nearly match that of hexagonal-BN. The Sb nanoribbon on hexagonal-BN exhibits gapped edge states, which we show to be tunable by an out-of-the-plane electric field, providing controllable gating of edge state important for device applications.
Full text link https://tinyurl.com/hxpsjb39
Article title: Prediction of Quantum Anomalous Hall Insulator in half-fluorinated GaBi Honeycomb
Authors: Sung-Ping Chen, Zhi-Quan Huang, Christian P. Crisostomo, Chia-Hsiu Hsu, Feng-Chuan Chuang, Hsin Lin & Arun Bansil
Publication title: Scientific Reports 6, 2016
Abstract:
Using first-principles electronic structure calculations, we predict half-fluorinated GaBi honeycomb under tensile strain to harbor a quantum anomalous Hall (QAH) insulator phase. We show that this QAH phase is driven by a single inversion in the band structure at the Γ point. Moreover, we have computed the electronic spectrum of a half-fluorinated GaBi nanoribbon with zigzag edges, which shows that only one edge band crosses the Fermi level within the band gap. Our results suggest that half-fluorination of the GaBi honeycomb under tensile strain could provide a new platform for developing novel spintronics devices based on the QAH effect.
Full text link https://tinyurl.com/59tbj7d7
Article title: Prediction of two-dimensional topological insulator by forming a surface alloy on Au/Si(111) substrate
Authors: Feng-Chuan Chuang, Chia-Hsiu Hsu, Hsin-Lei Chou, Christian P. Crisostomo, Zhi-Quan Huang, Shih-Yu Wu, Chien-Cheng Kuo, Wang-Chi V. Yeh, Hsin Lin, and Arun Bansil
Publication title: Physical Review B 93, 2016
Abstract:
Two-dimensional (2D) topological insulators (TIs), which can be integrated into the modern silicon industry, are highly desirable for spintronics applications. Here, using first-principles electronic structure calculations, we show that the Au/Si(111)-√3 substrate can provide a platform for hosting 2D TIs obtained through the formation of surface alloys with a honeycomb pattern of adsorbed atoms. We systematically examined elements from groups III to VI of the periodic table at 2/3 monolayer coverage on Au/Si(111)-√3, and found that In, Tl, Ge, and Sn adsorbates result in topologically nontrivial phases with band gaps varying from 0 to 50 meV. Our scanning tunneling microscopy and low-energy electron diffraction experiments confirm the presence of the honeycomb pattern when Bi atoms are deposited on Au/Si(111)-√3, in accord with our theoretical predictions. Our findings pave the way for using surface alloys as a potential route for obtaining viable 2D TI platforms.
Full text available upon request to the author
Article title: Robust Large Gap Two-Dimensional Topological Insulators in Hydrogenated III-V Buckled Honeycombs
Authors: Christian P. Crisostomo, Liang-Zi Yao, Zhi-Quan Huang, Chia-Hsiu Hsu, Feng-Chuan Chuang, Hsin Lin, Marvin A. Albao, and Arun Bansil
Publication title: Nano Letters 15(10), September 2015
Abstract:
A large gap two-dimensional (2D) topological insulator (TI), also known as a quantum spin Hall (QSH) insulator, is highly desirable for low-power-consuming electronic devices owing to its spin-polarized back-scattering-free edge conducting channels. Although many freestanding films have been predicted to harbor the QSH phase, band topology of a film can be modified substantially when it is placed or grown on a substrate, making the materials realization of a 2D TI challenging. Here we report a first-principles study of possible quantum spin Hall (QSH) phases in 75 binary combinations of group III (B, Al, Ga, In, and Tl) and group V (N, P, As, Sb, and Bi) elements in the 2D buckled honeycomb structure, including hydrogenation on one or both sides of the films to simulate substrate effects. A total of six compounds (GaBi, InBi, TlBi, TlAs, TlSb, and TlN) are identified to be nontrivial in unhydrogenated case; whereas for hydrogenated case, only four (GaBi, InBi, TlBi, and TlSb) remains nontrivial. The band gap is found to be as large as 855 meV for the hydrogenated TlBi film, making this class of III-V materials suitable for room temperature applications. TlBi remains topologically nontrivial with a large band gap at various hydrogen coverages, indicating the robustness of its band topology against bonding effects of substrates.
Full text available upon request to the author
Article title: Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate
Authors: Liang-Zi Yao, Christian P. Crisostomo, Chun-Chen Yeh, Shu-Ming Lai, Zhi-Quan Huang, Chia-Hsiu Hsu, Feng-Chuan Chuang, Hsin Lin & Arun Bansil
Publication title: Scientific reports 5, 2015
Abstract:
We have carried out systematic first-principles electronic structure computations of growth of ultrathin films of compounds of group III (B, Al, In, Ga and Tl) with group V (N, P, As, Sb and Bi) elements on Si(111) substrate, including effects of hydrogenation. Two bilayers (BLs) of AlBi, InBi, GaBi, TlAs and TlSb are found to support a topological phase over a wide range of strains, in addition to BBi, TlN and TlBi which can be driven into the nontrivial phase via strain. A large band gap of 134 meV is identified in hydrogenated 2 BL film of InBi. One and two BL films of GaBi and 2 BL films of InBi and TlAs on Si(111) surface possess nontrivial phases with a band gap as large as 121 meV in the case of 2 BL film of GaBi. Persistence of the nontrivial phase upon hydrogenations in the III-V thin films suggests that these films are suitable for growing on various substrates.
Full text link https://tinyurl.com/48dk2fyy
Oral Presentations:
Article title: Prediction of Quantum Anomalous Hall Insulator in Transition Metal-Doped GaBi Honeycombs.
Authors: J.-R. Su, C.P. Crisostomo, Z.-Q. Huang, C.-H. Hsu, H. Lin, and F.-C. Chuang.
Meeting title: Physical Society of Taiwan Annual Meeting, January 2018
Article title: Chemically-induced Large-Gap Quantum Anomalous Hall Insulator States in III-Bi
Honeycombs.
Authors: C.P. Crisostomo, F.-C. Chuang, Z.-Q. Huang, C.-H. Hsu, H. Lin, and A. Bansil.
Meeting title: American Physical Society March Meeting 2017, New Orleans,
Louisiana, USA, March 2017.
Article title: Quantum Anomalous Hall Insulator in Asymmetrically Functionalized Germanene.
Authors: C.-H. Hsu, Z.-Q. Huang, C.P. Crisostomo, Y.-M. Gu, Y. Fang, S. Wu, Z.-Z. Zhu, L. Huang, F.-C. Chuang, H. Lin, A. Bansil.
Meeting title: American Physical Society March Meeting 2017, New Orleans, Louisiana, USA, March 2017.
Article title: Chemically-induced Large-Gap Quantum Anomalous Hall Insulator States in III-Bi Honeycombs.
Authors: C.P. Crisostomo, F.-C. Chuang, L.-Z. Yao, C.-C. Yeh, S.-M. Lai, Z.-Q. Huang, C.-H. Hsu, H. Lin, and A. Bansil.
Meeting title: Physical Society of Republic of China (Taiwan) Annual Meeting 2017, Tamkang University, Taipei, Taiwan, January 2017.
Article title: Predicted Growth of Two-Dimensional Topological Insulators Consisting of Hydrogenated III-V Thin films on Si(111) Substrate.
Authors: F.-C. Chuang, C.P. Crisostomo, L.-Z. Yao, C.-C. Yeh, S.-M. Lai, Z.-Q. Huang, C.-H. Hsu, H. Lin, and A. Bansil.
Meeting title: APS March Meeting 2016, Baltimore, Maryland, USA, March 2016.
Article title: Prediction of Quantum Anomalous Hall Insulator in Functionalized GaBi Honeycomb
Authors: C.P. Crisostomo, S.-P. Chen, Z.-Q. Huang, C.-H. Hsu, F.-C. Chuang, H. Lin, and A. Bansil
Meeting title: Physical Society of Republic of China (Taiwan) Annual Meeting 2016, National SunYat-Sen University, Kaohsiung, Taiwan, January 2016.
Article title: Prediction of Large-Gap Two-Dimensional Topological Insulators Consisting of Hydrogenated Bilayers of Group III Elements with Bi.
Authors: C.P. Crisostomo, L-Z Yao, C-H Hsu, Z-Q Huang, F-C Chuang, H Lin, M Albao, A Bansil.
Meeting title: American Physical Society March Meeting, San Antonio, Texas, USA, March 2015.
Article title: An Ising-Based Model For the Spread of Infection.
Authors: C.P. Crisostomo and CMN Piñol.
Conference title: International Conference on Mathematical Biology and Ecology, Amsterdam, The Netherlands, July 2012.
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